Static and high frequency modelling of vertical channel mos transistor (V.MOS)
نویسندگان
چکیده
2014 The aim of this paper is to describe the modelling methods of the vertical channel MOS transistor (V. MOS) under DC and small signal HF conditions. By taking into account the scattering velocity saturation mechanisms, it will primarily be shown that (i) the drain current-gate voltage transfer characteristic becomes linear and (ii) the dynamic HF parameters are independent of the gate-source voltage. Moreover it will appear that the maximum working frequencies cannot overcome the UHF range. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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